﻿@inproceedings{PRAM:Chung,
   Author = {Chung, Lam},
   Title = {{Cell Design Considerations for Phase Change Memory as a Universal Memory}},
   BookTitle = {VLSI Technology, Systems and Applications, 2008. VLSI-TSA 2008. International Symposium on},
   Pages = {132-133},
   Year = {2008} }

@article{PRAM:DaeHwan,
   Author = {Dae-Hwan Kang and Dong-Ho Ahn and Ki-Bum Kim and Webb, J. F. and Kyung-Woo Yi},
   Title = {{One-Dimensional Heat Conduction Model for an Electrical Phase Change Random Access Memory Device with an 8F}$^2${ Memory Cell (F=}$0.15\mu m$)},
   Journal = {Journal of Applied Physics},
   Volume = {94},
   Number = {5},
   Pages = {3536--3542},
   Year = {2003} }

@article{PRAM:Rapid,
   Author = {N. Yamada and E. Ohno and K. Nishiuchi and N. Akahira},
   Title = {{Rapid Phase Transitions of GeTe-Sb}$_2${Te}$_3${ Pseudobinary Amorphous Thin Films for an Optical Disk Memory}},
   Journal = {Journal of Applied Physics},
   Volume = {69},
   Number = {5},
   Pages = {2849--2856},
   Year = {1991} }

@article{PRAM:IBMJ,
    Author = {S. Raoux and G. W. Burr and M. J. Breitwisch and C. T. Rettner and Y.-C. Chen and others},
    Title = {{Phase-Change Random Access Memory: A Scalable Technology}},
    Journal = {IBM Journal of Research and Development},
    Volume = {52},
    Number = {4/5},
    Year = {2008} }

@article{PRAM:IBMSCM,
    Author = {G. W. Burr and B. N. Kurdi and J. C. Scott and C. H. Lam and K. Gopalakrishnan and others},
    Title = {{Overview of Candidate Device Technologies for Storage-Class Memory}},
    Journal = {IBM Journal of Research and Development},
    Volume = {52},
    Number = {4/5},
    Year = {2008} }

@inproceedings{PRAM:Hitachi2007,
   Author = {Hanzawa, S. and Kitai, N. and Osada, K. and Kotabe, A. and Matsui, Y. and others},
   Title = {{A 512kB Embedded Phase Change Memory with 416kB/s Write Throughput at 100}$\mu${A Cell Write Current}},
   BookTitle = {Solid-State Circuits Conference, 2007. ISSCC 2007. Digest of Technical Papers. IEEE International},
   Pages = {474-616},
   Year = {2007} }



@inproceedings{PRAM:Samsung2007,
   Author = {Kwang-Jin Lee and Beak-Hyung Cho and Woo-Yeong Cho and Sangbeom Kang and Byung-Gil Choi and others},
   Title = {{A 90nm 1.8V 512Mb Diode-Switch PRAM with 266MB/s Read Throughput}},
   BookTitle = {Solid-State Circuits Conference, 2007. ISSCC 2007. Digest of Technical Papers. IEEE International},
   Pages = {472-616},
   Year = {2007} }



@inproceedings{PRAM:Hitachi2005,
   Author = {Matsuzaki, N. and Kurotsuchi, K. and Matsui, Y. and Tonomura, O. and Yamamoto, N. and others},
   Title = {{Oxygen-Doped GeSbTe Phase-Change Memory Cells Featuring 1.5V/100}$\mu${A Standard 0.13}$\mu${m CMOS Operations}},
   BookTitle = {Electron Devices Meeting, 2005. IEDM Technical Digest. IEEE International},
   Pages = {738-741},
   Year = {2005} }



@article{
   Author = {Milliron, D. J. and Caldwell, M. A. and Wong, H. S. P.},
   Title = {Synthesis of Metal Chalcogenide Nanodot Arrays Using Block Copolymer-Derived Nanoreactors},
   Journal = {Nano Lett.},
   Volume = {7},
   Number = {11},
   Pages = {3504-3507},
      Year = {2007} }



@inproceedings{
   Author = {Oh, J. H. and Park, J. H. and Lim, Y. S. and Lim, H. S. and Oh, Y. T. and others},
   Title = {Full Integration of Highly Manufacturable 512Mb PRAM based on 90nm Technology},
   BookTitle = {Electron Devices Meeting, 2006. IEDM '06. International},
   Pages = {1-4},
   Year = {2006} }



@inproceedings{PRAM:ST2004,
   Author = {Pellizzer, F. and Pirovano, A. and Ottogalli, F. and Magistretti, M. and Scaravaggi, M. and others},
   Title = {{Novel }$\mu${Trench Phase-Change Memory Cell for Embedded and Stand-Alone Non-Volatile Memory Applications}},
   BookTitle = {VLSI Technology, 2004. Digest of Technical Papers. 2004 Symposium on},
   Pages = {18-19},
   Year = {2004} }



@inproceedings{PRAM:Pirovano,
   Author = {Pirovano, A. and Lacaita, A. L. and Benvenuti, A. and Pellizzer, F. and Hudgens, S. and others},
   Title = {{Scaling Analysis of Phase-Change Memory Technology}},
   BookTitle = {Electron Devices Meeting, 2003. IEDM '03 Technical Digest. IEEE International},
   Pages = {29.6.1-29.6.4},
   Year = {2003} }

@inproceedings{PRAM:scale1,
   Author = {Raoux, S. and Rettner, C. T. and Yi-Chou, Chen and Jordan-Sweet, J. and Yuan, Zhang and others},
   Title = {Scaling Properties of Phase Change Materials},
   BookTitle = {Non-Volatile Memory Technology Symposium, 2007. NVMTS '07},
   Pages = {30-35},
   Year = {2007} }

@inproceedings{PRAM:scale,
   Author = {Sang-Bum Kim and Wong, H.-S. P.},
   Title = {{Generalized Phase Change Memory Scaling Rule Analysis}},
   BookTitle = {Non-Volatile Semiconductor Memory Workshop, 2006. IEEE NVSMW 2006. 21st},
   Pages = {92-94},
   Year = {2006} }

@article{PRAM:ITA,
   Author = {Seevinck, E. and van Beers, P. J. and Ontrop, H.},
   Title = {{Current-Mode Techniques for High-Speed VLSI Circuits with Application to Current Sense Amplifier for CMOS SRAM's}},
   Journal = {Solid-State Circuits, IEEE Journal of},
   Volume = {26},
   Number = {4},
   Pages = {525-536},
   Note = {0018-9200},
   Year = {1991} }

@inproceedings{PRAM:Diode,
   Author = {Yuan Zhang and Sang-Bum Kim and McVittie, J. P. and Jagannathan, H. and Ratchford, J. B. and others},
   Title = {{An Integrated Phase Change Memory Cell With Ge Nanowire Diode For Cross-Point Memory}},
   BookTitle = {VLSI Technology, 2007 IEEE Symposium on},
   Pages = {98-99},
   Year = {2007} }

@MISC{PRAM:CACTI51,
    Author = {Shyamkumar Thoziyoor and Naveen Muralimanohar and Jung-Ho Ahn, and Norman P. Jouppi},
    Title = {{CACTI 5.1 Technical Report}},
    NOTE = {{HP Labs}}
    Year = {2008}
}

@inproceedings{PRAM:CACTI-D,
   Author = {Thoziyoor, S. and Ahn, J.-H. and Monchiero, M. and Brockman, J. B. and Jouppi, N. P.},
   Title = {{A Comprehensive Memory Modeling Tool and Its Application to the Design and Analysis of Future Memory Hierarchies}},
   BookTitle = {Computer Architecture, 2008. ISCA '08. 35th International Symposium on},
   Pages = {51-62},
   Year = {2008} }

@misc{PRAM:ITRS,
    Author = {{International Technology Roadmap for Semiconductors}},
    Title = {{Process Integration, Devices, and Structures 2007 Edition}},
    Note = {\url{http://www.itrs.net/}}
    }

@inproceedings{PRAM:Samsung2006,
   Author = {Sangbeom Kang and Woo-Yeong Cho and Beak-Hyung Cho and Kwang-Jin Lee and Chang-Soo Lee and others},
   Title = {{A 0.1}$\mu${m 1.8V 256Mb 66MHz Synchronous Burst PRAM}},
   BookTitle = {Solid-State Circuits Conference, 2006. ISSCC 2006. Digest of Technical Papers. IEEE International},
   Pages = {487-496},
   Year = {2006} }

@article{PRAM:Lowrey,
   Author = {Lowrey, T. A. and Hudgens, S. J. and Czubatyj, W. and Dennison, C. H. and Kostylev, S. A. and others},
   Title = {{Characteristics of OUM Phase Change Materials and Devices for High Density Nonvolatile Commodity and Embedded Memory Applications}},
   Journal = {Material Research Society Symposium HH, Tech. Dig.},
   Pages = {HH2.1.1 to HH2.1.12},
      Year = {2003} }

@inproceedings{PRAM:status,
   Author = {Atwood, G. and Bez, R.},
   Title = {{Current Status of Chalcogenide Phase Change Memory}},
   BookTitle = {Device Research Conference Digest, 2005. DRC '05. 63rd},
   Volume = {1},
   Pages = {29-33},
   Year = {2005} }

@article{PRAM:PTM,
   Author = {Zhao, W. and Cao, Y.},
   Title = {{New Generation of Predictive Technology Model for Sub-45 nm Early Design Exploration}},
   Journal = {Electron Devices, IEEE Transactions on},
   Volume = {53},
   Number = {11},
   Pages = {2816-2823},
   Note = {0018-9383},
   Year = {2006} }

@inproceedings{PRAM:BJT,
   Author = {Bedeschi, F. and Bonizzoni, E. and Casagrande, G. and Gastaldi, R. and Resta, C. and others},
   Title = {{SET and RESET Pulse Characterization in BJT-Selected Phase-Change Memories}},
   BookTitle = {Circuits and Systems, 2005. ISCAS 2005. IEEE International Symposium on},
   Pages = {1270-1273 Vol. 2},
   Year = {2005} }

@article{PRAM:Samsung2006,
Author = {Hyung-Rok Oh and Beak-Hyung Cho and Woo-Yeong Cho and Sangbeom Kang and Byung-Gil Choi and others},
   Title = {{Enhanced Write Performance of a 64-Mb Phase-Change Random Access Memory}},
   Journal = {Solid-State Circuits, IEEE Journal of},
   Volume = {41},
   Number = {1},
   Pages = {122-126},
   Note = {0018-9200},
   Year = {2006} }

@article{PRAM:EVANS,
   Author = {Evans, R. J. and Franzon, P. D.},
   Title = {{Energy Consumption Modeling and Optimization for SRAM's}},
   Journal = {Solid-State Circuits, IEEE Journal of},
   Volume = {30},
   Number = {5},
   Pages = {571-579},
   Note = {0018-9200},
   Year = {1995} }

@MISC{PRAM:eCACTI,
    Author = {M. Mamidipaka and N. Dutt},
      Title = {{eCACTI: An Enhanced Power Estimation Model for
On-chip Caches}},
      NOTE = {{Center for Embedded Computer Systems}},
      Year = {2004}
}

@article{PRAM:CACTI60,
 author = {Naveen Muralimanohar and Rajeev Balasubramonian and Norman P. Jouppi},
 title = {{Architecting Efficient Interconnects for Large Caches with CACTI 6.0}},
 journal = {IEEE Micro},
 volume = {28},
 number = {1},
 year = {2008},
 issn = {0272-1732},
 pages = {69--79},
}

@ARTICLE{CACTI:NORM,
    author = {Steven J. E. Wilton and Norm Jouppi},
    title = {{CACTI: An Enhanced Cache Access and Cycle Time Model}},
    journal = {IEEE Journal of Solid-State Circuits},
    year = {1996},
    volume = {31},
    pages = {677--688}
}

@misc{DRAM:power,
    Author = {{Micron}},
    Title = {{System Power Calculator}},
    Note = {\url{http://www.micron.com/support/part_info/powercalc.aspx}}
    }

@misc{iPhone,
    Author = {{Apple}},
    Title = {{iPhone Technical Specification}},
    Note = {\url{http://www.apple.com/iphone/specs.html}}
    }

@inproceedings{PRAM:Ahn,
   author = {Ahn, S. J. and Song, Y. J. and Jeong, C. W. and Shin, J. M. and Fai, Y. and others},
   title = {{Highly manufacturable high density phase change memory of 64Mb and beyond}},
   booktitle = {Electron Devices Meeting, 2004. IEDM Technical Digest. IEEE International},
   pages = {907-910},
   year = {2004}
}

@inproceedings{PRAM:Microsoft,
    author={Benjamin C. Lee and Engin Ipek and Onur Mutlu and Doug Burger},
    title={{Architecting Phase Change Memory as a Scalable DRAM Alternative}},
    booktitle={Computer Architecture, 2009. ISCA '09. 36th International Symposium on},
    year={2009}
}

@inproceedings{PRAM:IBM,
    author={Moinuddin K. Qureshi and Viji Srinivasan and Jude A. Rivers},
    title={{Scalable High Performance Main Memory System Using Phase-Change Memory Technology}},
    booktitle={Computer Architecture, 2009. ISCA '09. 36th International Symposium on},
    year={2009}
}

@inproceedings{PRAM:XWU,
    author={Xiaoxia Wu and Jian Li and Lixin Zhang and Evan Speight and Ram Rajamony and Yuan Xie},
    title={{Hybrid Cache Architecture}},
    booktitle={Computer Architecture, 2009. ISCA '09. 36th International Symposium on},
    year={2009}
}
